Дослідження динамічного діапазону кремнієвих фотодіодів для застосування в оптичній пірометрії

Дмитро О. Вербіцький; Андрій О. Воронько

doi:10.20535/2523-4455.mea.284933

Vol. 28 · Issue 3 · 2023 Dec 27, 2023 Microsystems and Physical Electronics

Research on the Dynamic Range of Silicon Photodiodes for Optical Pyrometry Applications

ДВ

Дмитро О. Вербіцький Corresponding Національний технічний університет України "Київський політехнічний інститут імені Ігоря Сікорського" Ukraine

АВ

Андрій О. Воронько Національний технічний університет України «Київський політехнічний інститут імені Ігоря Сікорського» Ukraine

Pages284933.1-284933.7 PublishedDec 27, 2023

PDF (Ukrainian)

VOL 28 · ISS 3 · 2023 To the 125th Anniversary of Igor Sikorsky Kyiv Polytechnic Institute View issue

Abstract

Optical pyrometry is one of the main non-contact methods for precise temperature measurement of semiconductor wafers for vapour-phase epitaxy from metal-organic compounds (MOCVD). The requirements for the photocell of the pyrometer are due to the peculiarity of the process. In the pyrometer, the silicon photodiode operates in a mode that is characterized by a small bias voltage value, high sensitivity to weak light radiation, and low noise level. The main temperatures used in vapour-phase epitaxy technology depend on the semiconductor material being grown and the process parameters. Typically, process temperatures range from 500 to 1200 °C. A study of the dynamic range of a silicon photodiode for use in optical pyrometry was conducted. It was established that the minimum value of the dark current and the maximum value of the spectral sensitivity are key to obtaining the desired characteristics, namely, sensitivity to thermal radiation at a temperature of 450 °C. The peculiarities of the manufacturing technology of the planar-diffusion structure of the photodiode to achieve the necessary characteristics that ensure the production of photodiode structures with improved parameters are also considered.

Keywords

#silicon photodiode #optical pyrometry #vapour-phase epitaxy #dynamic range #dark current #spectral current sensitivity

References

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S. Xu, S. Zhang, J. D. Kirch, H. Gao, Y. Wang, M. L. Lee, S. R. Tatavarti, D. Botez, L. J. Mawst, “8.1 μm-emitting InP-based quantum cascade laser grown on Si by metalorganic chemical vapor deposition.” Appl. Phys. Lett. 17 July 2023; 123 (3): 031110. DOI: https://doi.rog/10.1063/5.0155202
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B. McEwen, M. A. Reshchikov, E. Rocco, V. Meyers, K. Hogan, O. Andrieiev, M. Vorobiov, Denis O. Demchenko, and F. Shahedipour-Sandvik, “MOCVD Growth and Characterization of Be-Doped GaN”, ACS Applied Electronic Materials, 2022 4 (8), 3780-3785 DOI: https://doi.rog/10.1021/acsaelm.1c01276
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V. G. Verbitskiy, V. S. Antonyuk, A. O. Voronko, L. M. Korolevych, D. V. Verbitskiy and D. O. Novikov, “Matrix of Photo-sensitive Elements for Determining the Coordinates of the Source of Optical Radiation,” Journal of Nano- and Electronic Phys-ics, vol. 13, no. 4, article 04029, Aug 2021, DOI: https://doi.org/10.21272/jnep.13(4).04029
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N. Margalit, C. Xiang, S. M. Bowers, A. Bjorlin, R. Blum & J. E. Bowers, "Perspective on the future of silicon photonics and electronics", Applied Physics Letters, 118(22), 220501. DOI: https://doi.org/10.1063/5.0050117
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Park Myunghwan, Choi Kwangsik, S. Singh, S. Aslam, and M. Peckerar “Low leakage current technology in P+N silicon photodiode detector,” 2009 International Semiconductor Device Research Symposium.2009. DOI: https;//doi.org/10.1109/isdrs.2009.5378119
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P. Dalapati, N. B. Manik, and A. N. Basu, “Effect of Temperature on Electro-Optical Characteristics of Silicon Based p-n Photodiode (VTB8440BH)”. Silicon. 2018. DOI: https://doi.org/10.1007/s12633-018-9789-0
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1-10 of 36 Next

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[1] S. I. Krukovskyi, V. Arikov, A. O. Voronko and V. S. Antonyuk, “Features of Low-Temperature GaAs Formation for Epitaxy Device Structures,” Journal of Nano- and Electronic Physics, 14 No 2, 02016, 2022, DOI: https;//doi.org/10.21272/jnep.14(2).02016

[2] S. Xu, S. Zhang, J. D. Kirch, H. Gao, Y. Wang, M. L. Lee, S. R. Tatavarti, D. Botez, L. J. Mawst, “8.1 μm-emitting InP-based quantum cascade laser grown on Si by metalorganic chemical vapor deposition.” Appl. Phys. Lett. 17 July 2023; 123 (3): 031110. DOI: https://doi.rog/10.1063/5.0155202

[3] A. R. Boyd, S. Degroote, M. Leys, F. Schulte, O. Rockenfeller, M. Luenenbuerger, and M. Heuken” Growth of GaN/AlGaN on 200 mm diameter silicon (111) wafers by MOCVD,” Physica Status Solidi (c), 6(S2), S1045–S1048. June 2009. DOI: https://doi.org/10.1002/pssc.200880925

[4] B. McEwen, M. A. Reshchikov, E. Rocco, V. Meyers, K. Hogan, O. Andrieiev, M. Vorobiov, Denis O. Demchenko, and F. Shahedipour-Sandvik, “MOCVD Growth and Characterization of Be-Doped GaN”, ACS Applied Electronic Materials, 2022 4 (8), 3780-3785 DOI: https://doi.rog/10.1021/acsaelm.1c01276

[5] A. O. Voronko and D. O. Novikov, “Dependence of temperature determination accuracy on the bandwidth of the interference filter in optical pyrometry systems”, Bull. Kyiv Polytech. Inst. Ser. Instrum. Mak., no. 65(1), pp. 52–57, Jun. 2023, DOI: https;//doi.org/10.20535/1970.65(1).2023.283332

[6] V. G. Verbitskiy, V. S. Antonyuk, A. O. Voronko, L. M. Korolevych, D. V. Verbitskiy and D. O. Novikov, “Matrix of Photo-sensitive Elements for Determining the Coordinates of the Source of Optical Radiation,” Journal of Nano- and Electronic Phys-ics, vol. 13, no. 4, article 04029, Aug 2021, DOI: https://doi.org/10.21272/jnep.13(4).04029

[7] T. Igo, and K. Sato, “Noise Characteristics in Silicon Photodiodes,” Japanese Journal of Applied Physics, 8(12), 1481–1491. 1969. DOI: https://doi.org/10.1143/jjap.8.1481

[8] L.-F. Mao, ”Physical Model of the Effects of Drift Velocity on Current Transport in PN Junctions under the Forward Electric Field,”. Silicon. 2019. DOI: https;//doi.org/10.1007/s12633-019-00249-8

[9] N. Margalit, C. Xiang, S. M. Bowers, A. Bjorlin, R. Blum & J. E. Bowers, "Perspective on the future of silicon photonics and electronics", Applied Physics Letters, 118(22), 220501. DOI: https://doi.org/10.1063/5.0050117

[10] Z. Djuríc, and B. Radjenović, “Rise time of silicon p-n-p photodiodes,” Solid-State Electronics, 26(12), 1143–1149. 1983. DOI: https;//doi.org/10.1016/0038-1101(83)90141-7

[11] Park Myunghwan, Choi Kwangsik, S. Singh, S. Aslam, and M. Peckerar “Low leakage current technology in P+N silicon photodiode detector,” 2009 International Semiconductor Device Research Symposium.2009. DOI: https;//doi.org/10.1109/isdrs.2009.5378119

[12] J. Geist, A. J. D. Farmer, P. J. Martin, F. J. Wilkinson and S. J. Collocott, “Elimination of interface recombination in oxide passivated silicon p^+n photodiodes by storage of negative charge on the oxide surface,” Applied Optics, 21(6), 1130.1982. DOI: https;//doi.org/10.1364/ao.21.001130

[13] E. F. Zalewski and J. Geist, “Silicon photodiode absolute spectral response self-calibration,” Applied Optics, 19(8), 1214. 1989. DOI: https://doi.org/10.1364/ao.19.001214

[14] R. Korde, R. And J. Geist, “Quantum efficiency stability of silicon photodiodes,” Applied Optics, 26(24), 5284. 1987. DOI: https://doi.org/10.1364/ao.26.005284

[15] P. Dalapati, N. B. Manik, and A. N. Basu, “Effect of Temperature on Electro-Optical Characteristics of Silicon Based p-n Photodiode (VTB8440BH)”. Silicon. 2018. DOI: https://doi.org/10.1007/s12633-018-9789-0

[16] H. Ouchi, T. Mukai, T. Kamei, and M. Okamura, “Silicon p-n junction photodiodes sensitive to ultraviolet radiation,” IEEE Transactions on Electron Devices, 26(12), 1965–1969. DOI: https://doi.org/10.1109/t-ed.1979.19803

Research on the Dynamic Range of Silicon Photodiodes for Optical Pyrometry Applications

Abstract

Keywords

References

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