Моделювання явища інверсії градієнта профілю алюмінію при рідиннофазній епитаксії гетероструктур GaAl(P,As,Sb)

Mikhail Removych Dombrougov

doi:10.20535/2523-4455.2019.24.1.160164

Vol. 24 · Issue 1 · 2019 Feb 28, 2019 Microsystems and Physical Electronics

Simulation of the Inversion of the Aluminum Profile Gradient at Liquid Phase Epitaxy of GaAl(P, As, Sb) Heterostructures

Mikhail Removych Dombrougov Corresponding Національний технічний університет України "Київський політехнічний інститут імені Ігоря Сікорського" Ukraine

Pages6-14 PublishedFeb 28, 2019

PDF (Ukrainian)

VOL 24 · ISS 1 · 2019 View issue

Abstract

The inversion of the aluminum profile gradient in the epitaxial Ga-Al-Nm (Nm=P, As, Sb) heterostructures grown by the forced cooling from a liquid phase were investigated. Simulation of the liquid phase epitaxy is carried out in the Pfann approximation in the following assumptions. The problem is one-dimensional, the epitaxial film grows in Frank–van der Merwe growth mode. The diffusion in the solid phase is frozen. The decrease in temperature is so slow that the diffusion in the liquid phase significantly exceeds the solid film growth rate. The degree of supersaturation of the liquid solution is so small that the composition of growing solid layers is determined by the equilibrium phase diagram. Given that in the liquid phase gallium predominates and the fraction of aluminum and phosphorus, arsenic or stibium do not exceed several percent, the liquid phase is considered as a dilute quasi-regular solution. The crystalline phase is considered as an ideal solid solution due to almost identical crystalline lattices in each pair GaP-AlP, GaAs-AlAs, GaSb-AlSb. Numerical calculations are carried out for growth processes in several different initial compositions of the growth solution: for Ga-Al-P – from 1500 K liquidus isoterm, for Ga-Al-As – from 1200 K and for Ga-Al -Sb – from 850 K. The results are presented in the graphs of the solid phase composition depended of the crystallization temperature and of the film layer depth, as well as on the diagram of moving the liquid phase figurative point during the growth process. Comparison of simulation results with experimental data confirms the correctness of the applied model. It is shown that at each temperature there is an inverse composition characterized by a certain content of aluminum in the solid phase. If, on cooling, the figurative point of the growth solution intersects the inverse curve then an inversion of the aluminum profile gradient occurs: the epitaxial film, which previously was growing with a decrease in the aluminum, increases further with its increase. The reason for such a phenomenon is the possible compensation of two interconnected competing factors when the growth solution cools: a decrease in the amount of nonmetal in the liquid phase and an increase in the aluminum segregation coefficient. The relationship between the inverse curve shape and the phase diagram parameters is established. The principal possibility of growing in a single technological process of Ga-Al-P and Ga-Al-As (but not Ga-Al-Sb) planar heterostructures suitable for the manufacturing of microelectronic waveguide devices is shown. Ref. 22, fig. 9, tabl. 1.

Keywords

#liquid phase epitaxy #forced cooling #solid solutions А3В5 #Ga-Al-P #Ga-Al-As #Ga-Al-Sb #inverse curve #planar waveguide structures

References

V. N. Bessolov, T. T. Dedegkaev, I. I. Kryukov, Yu. P. Yakovlev, “Osobennosti kristallizatsii varizonnykh Ga1–xAlxP struktur [Peculiarities of crystallization of graded-gap Ga1–xAlxP structures],” Zhurnal tehnicheskoj fiziki, vol.49(9), pp. 1958-1961, 1979, ISSN: 0044-4642.
V. A. Elyutin, S. Yu. Karpov, S. G. Konnikov, “Zhidkostnaya epitaksiya plavnykh geteroperekhodov AlxGa1–xP [Liquid epitaxy of smooth AlxGa1–xP heterojunctions],” Pisma v ZhTF, vol. 6(1), pp. 23-25, 1980, ISSN: 0330-0116.
V. A. Elyutin, S. Yu. Karpov, E. L. Portnoi, D. N. Tretiyakov, “Osobennosti vyrashchivaniya volnovodnykh geterostruktur AlxGa1–xAs s plavnym izmeneniem sostava [Peculiarities of growing waveguide AlxGa1–xAs heterostructures with a smooth composition change],” Pisma v ZhTF, vol. 4(11), pp. 629-633, 1978, ISSN: 0330-0116.
K. Y. Cheng, G. L. Pearson, “The Al-Ga-Sb Ternary Phase Diagram and its Application to Liquid Phase Epitaxial Growth,” J. Electrochem. Soc., vol. 124(5), рp. 753-757, 1977, DOI: 10.1149/1.2133400.
Zhao, X., Montgomery, K.H. & Woodall, J.M., “Layered Growth of Lattice-Mismatched GaxIn1-xP on GaP Substrates by Liquid Phase Epitaxy,” Journal of Electronic Materials, vol. 43(4), 2014, pp. 894-901. DOI: 10.1007/s11664-013-2966-4.
G. Juárez Díaz, J. Díaz-Reyes, J. Martínez-Juárez, M. Galván-Arellano, J. A. Balderas-López, “Structural characterization of AlxGa1-xSb grown by LPE,” Materials Science in Semiconductor Processing, vol. 15(5), 2012, pp. 472-479. DOI: 10.1016/j.mssp.2012.03.003.
D. M. Hurtado-Castañeda, J. L. Herrera-Pérez, J. S. Arias- Cerón, C. Reyes-Betanzo, P. Rodriguez-Fragoso, J. G. Mendoza-Álvarez, “Indium gallium arsenide antimonide photodetector grown by liquid phase epitaxy: Electrical characterization and optical response,” Materials Science in Semiconductor Processing, vol. 31, 2015, pp. 52-55. DOI: 10.1016/j.mssp.2014.11.023.
S. S. Chandvankar, A. P. Shah, A. Bhattacharya, K. S. Chandrasekaran, B. M. Arora, “Synthesis of AlGaAs-based strained separately confined heterostructure laser diodes by low temperature liquid-phase epitaxy,” Journal of Crystal Growth, vol. 260(3-4), 2004, pp. 348-359. DOI: 10.1016/j.jcrysgro.2003.08.066.
M. Milanova, P. Vitanov, P. Terziyska, G. Popov, G. Koleva, “Structural and electrical characteristics of InGaAsN layers grown by LPE,” Journal of Crystal Growth, vol. 346(1), 2012, pp. 79-82, DOI: 10.1016/j.jcrysgro.2012.02.021.
V. Rakovics, J. Nádas, I. Réti, Cs. Dücső, G. Battistiga, “Growth and characterization of broad spectrum infrared emitting GaInAsP/InP heterostructures,” Journal of Crystal Growth, vol. 468, 2017, pp. 572-575, DOI: 10.1016/j.jcrysgro.2016.11.123.
Y. Wang, S. Hu, W. Zhou, Y. Sun, B. Zhang, C. Wang, N. Dai, “LPE growth and optical characteristics of GaAs1-xSbx epilayer,” Journal of Crystal Growth, vol. 463, 2017, pp. 123-127. DOI: 10.1016/j.jcrysgro.2017.01.040.
V. Donchev, M. Milanova, I. Asenova, N. Shtinkov, D. Alonso-Álvarez, A. Mellor, Y. Karmakov, S. Georgiev, N. Ekins-Daukes, “Effect of Sb in thick InGaAsSbN layers grown by liquid phase epitaxy,” Journal of Crystal Growth, vol. 483, 2018, pp. 140-146. DOI: 10.1016/j.jcrysgro.2017.11.023.
P. Capper, S. Irvine, T. Joyce, “Epitaxial Crystal Growth: Methods and Materials,” Springer Handbook of Electronic and Photonic Materials, pp. 309-341, Springer, 2017. DOI: 10.1007/978-3-319-48933-9_14.
W. G. Pfann, Zone Melting, 2nd edition, Wiley, 1966 or Literary Licensing, 2013. ISBN: 978-1-258-79942-7.
K. Oura, M. Katayama, A. V. Zotov, V. G. Lifshits, A. A. Saranin, “Growth of Thin Films,” Surface Science, pp. 357-387, Springer, 2003. DOI: 10.1007/978-3-662-05179-5_14.
M. R. Dombrougov, G. I. Zhovnir, “Ravnovesnaya kristallizatsiya v troinykh sistemakh s kvazibinarnym razrezom [Equilibrium crystallization in ternary systems with a quasi-binary cut],” Elektronnaya tekhnika. Seriya 6. Materialy, 1986, no 6, pp. 37-39.
H. C. Casey, Jr., M. B. Panish, “Phase Equilibria and Heteroepitaxy,” Heterostructure Lasers. Part B. Materials and Operating Characteristics. Academic Press, 1978. DOI: 10.1016/B978-0-12-163102-4.50009-9.
K. Nakajima, “Phase Diagrams and Modeling in Liquid Phase Epitaxy,” Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials, pp. 45–83, Wiley, 2007. DOI: 10.1002/9780470319505.ch3.
M. Wośko, B. Paszkiewicz1, K. Tarnowski, B. Ściana1, D. Radziewicz1, W. Salejda, R. Paszkiewicz1, M. Tłaczała, “Reverse engineering of AlxGa1-xAs/GaAs structures composition by reflectance spectroscopy,” Оpto-electronics review, vol. 19(4), рp. 418–424, 2011. DOI: 10.2478/s11772-011-0038-y.
S. Adachi, “III-V Ternary and Quaternary Compounds,” Springer Handbook of Electronic and Photonic Materials, pp. 725-741, Springer, 2017. DOI: 10.1007/978-3-319-48933-9_30
V. A. Mishurnyi, F. de Anda, V. A. Elyukhin, I. C. Hernandez, “Growth of Quantum-Well Heterostructures by Liquid Phase Epitaxy,” Critical Reviews in Solid State and Materials Sciences, vol. 31(1-2), 2006, pp. 1-13. DOI: 10.1080/10408430500538695.
M. A. Vasilenko, I. G. Neizvestny, N. L. Shwartz, “Formation of GaAs nanostructures by droplet epitaxy – Monte Carlo simulation,” Computational Materials Science, vol. 102, 2015, pp. 286-292, DOI: 10.1016/j.commatsci.2015.02.032.

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[1] V. N. Bessolov, T. T. Dedegkaev, I. I. Kryukov, Yu. P. Yakovlev, “Osobennosti kristallizatsii varizonnykh Ga1–xAlxP struktur [Peculiarities of crystallization of graded-gap Ga1–xAlxP structures],” Zhurnal tehnicheskoj fiziki, vol.49(9), pp. 1958-1961, 1979, ISSN: 0044-4642.

[2] V. A. Elyutin, S. Yu. Karpov, S. G. Konnikov, “Zhidkostnaya epitaksiya plavnykh geteroperekhodov AlxGa1–xP [Liquid epitaxy of smooth AlxGa1–xP heterojunctions],” Pisma v ZhTF, vol. 6(1), pp. 23-25, 1980, ISSN: 0330-0116.

[3] V. A. Elyutin, S. Yu. Karpov, E. L. Portnoi, D. N. Tretiyakov, “Osobennosti vyrashchivaniya volnovodnykh geterostruktur AlxGa1–xAs s plavnym izmeneniem sostava [Peculiarities of growing waveguide AlxGa1–xAs heterostructures with a smooth composition change],” Pisma v ZhTF, vol. 4(11), pp. 629-633, 1978, ISSN: 0330-0116.

[4] K. Y. Cheng, G. L. Pearson, “The Al-Ga-Sb Ternary Phase Diagram and its Application to Liquid Phase Epitaxial Growth,” J. Electrochem. Soc., vol. 124(5), рp. 753-757, 1977, DOI: 10.1149/1.2133400.

[5] Zhao, X., Montgomery, K.H. & Woodall, J.M., “Layered Growth of Lattice-Mismatched GaxIn1-xP on GaP Substrates by Liquid Phase Epitaxy,” Journal of Electronic Materials, vol. 43(4), 2014, pp. 894-901. DOI: 10.1007/s11664-013-2966-4.

[6] G. Juárez Díaz, J. Díaz-Reyes, J. Martínez-Juárez, M. Galván-Arellano, J. A. Balderas-López, “Structural characterization of AlxGa1-xSb grown by LPE,” Materials Science in Semiconductor Processing, vol. 15(5), 2012, pp. 472-479. DOI: 10.1016/j.mssp.2012.03.003.

[7] D. M. Hurtado-Castañeda, J. L. Herrera-Pérez, J. S. Arias- Cerón, C. Reyes-Betanzo, P. Rodriguez-Fragoso, J. G. Mendoza-Álvarez, “Indium gallium arsenide antimonide photodetector grown by liquid phase epitaxy: Electrical characterization and optical response,” Materials Science in Semiconductor Processing, vol. 31, 2015, pp. 52-55. DOI: 10.1016/j.mssp.2014.11.023.

[8] S. S. Chandvankar, A. P. Shah, A. Bhattacharya, K. S. Chandrasekaran, B. M. Arora, “Synthesis of AlGaAs-based strained separately confined heterostructure laser diodes by low temperature liquid-phase epitaxy,” Journal of Crystal Growth, vol. 260(3-4), 2004, pp. 348-359. DOI: 10.1016/j.jcrysgro.2003.08.066.

[9] M. Milanova, P. Vitanov, P. Terziyska, G. Popov, G. Koleva, “Structural and electrical characteristics of InGaAsN layers grown by LPE,” Journal of Crystal Growth, vol. 346(1), 2012, pp. 79-82, DOI: 10.1016/j.jcrysgro.2012.02.021.

[10] V. Rakovics, J. Nádas, I. Réti, Cs. Dücső, G. Battistiga, “Growth and characterization of broad spectrum infrared emitting GaInAsP/InP heterostructures,” Journal of Crystal Growth, vol. 468, 2017, pp. 572-575, DOI: 10.1016/j.jcrysgro.2016.11.123.

[11] Y. Wang, S. Hu, W. Zhou, Y. Sun, B. Zhang, C. Wang, N. Dai, “LPE growth and optical characteristics of GaAs1-xSbx epilayer,” Journal of Crystal Growth, vol. 463, 2017, pp. 123-127. DOI: 10.1016/j.jcrysgro.2017.01.040.

[12] V. Donchev, M. Milanova, I. Asenova, N. Shtinkov, D. Alonso-Álvarez, A. Mellor, Y. Karmakov, S. Georgiev, N. Ekins-Daukes, “Effect of Sb in thick InGaAsSbN layers grown by liquid phase epitaxy,” Journal of Crystal Growth, vol. 483, 2018, pp. 140-146. DOI: 10.1016/j.jcrysgro.2017.11.023.

[13] P. Capper, S. Irvine, T. Joyce, “Epitaxial Crystal Growth: Methods and Materials,” Springer Handbook of Electronic and Photonic Materials, pp. 309-341, Springer, 2017. DOI: 10.1007/978-3-319-48933-9_14.

[14] W. G. Pfann, Zone Melting, 2nd edition, Wiley, 1966 or Literary Licensing, 2013. ISBN: 978-1-258-79942-7.

[15] K. Oura, M. Katayama, A. V. Zotov, V. G. Lifshits, A. A. Saranin, “Growth of Thin Films,” Surface Science, pp. 357-387, Springer, 2003. DOI: 10.1007/978-3-662-05179-5_14.

[16] M. R. Dombrougov, G. I. Zhovnir, “Ravnovesnaya kristallizatsiya v troinykh sistemakh s kvazibinarnym razrezom [Equilibrium crystallization in ternary systems with a quasi-binary cut],” Elektronnaya tekhnika. Seriya 6. Materialy, 1986, no 6, pp. 37-39.

[17] H. C. Casey, Jr., M. B. Panish, “Phase Equilibria and Heteroepitaxy,” Heterostructure Lasers. Part B. Materials and Operating Characteristics. Academic Press, 1978. DOI: 10.1016/B978-0-12-163102-4.50009-9.

[18] K. Nakajima, “Phase Diagrams and Modeling in Liquid Phase Epitaxy,” Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials, pp. 45–83, Wiley, 2007. DOI: 10.1002/9780470319505.ch3.

[19] M. Wośko, B. Paszkiewicz1, K. Tarnowski, B. Ściana1, D. Radziewicz1, W. Salejda, R. Paszkiewicz1, M. Tłaczała, “Reverse engineering of AlxGa1-xAs/GaAs structures composition by reflectance spectroscopy,” Оpto-electronics review, vol. 19(4), рp. 418–424, 2011. DOI: 10.2478/s11772-011-0038-y.

[20] S. Adachi, “III-V Ternary and Quaternary Compounds,” Springer Handbook of Electronic and Photonic Materials, pp. 725-741, Springer, 2017. DOI: 10.1007/978-3-319-48933-9_30

[21] V. A. Mishurnyi, F. de Anda, V. A. Elyukhin, I. C. Hernandez, “Growth of Quantum-Well Heterostructures by Liquid Phase Epitaxy,” Critical Reviews in Solid State and Materials Sciences, vol. 31(1-2), 2006, pp. 1-13. DOI: 10.1080/10408430500538695.

[22] M. A. Vasilenko, I. G. Neizvestny, N. L. Shwartz, “Formation of GaAs nanostructures by droplet epitaxy – Monte Carlo simulation,” Computational Materials Science, vol. 102, 2015, pp. 286-292, DOI: 10.1016/j.commatsci.2015.02.032.

Simulation of the Inversion of the Aluminum Profile Gradient at Liquid Phase Epitaxy of GaAl(P, As, Sb) Heterostructures

Abstract

Keywords

References

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