Research on the Dynamic Range of Silicon Photodiodes for Optical Pyrometry Applications

Abstract

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References

1. S. I. Krukovskyi, V. Arikov, A. O. Voronko and V. S. Antonyuk, “Features of Low-Temperature GaAs Formation for Epitaxy Device Structures,” Journal of Nano- and Electronic Physics, 14 No 2, 02016, 2022, DOI: https;//doi.org/10.21272/jnep.14(2).02016
2. S. Xu, S. Zhang, J. D. Kirch, H. Gao, Y. Wang, M. L. Lee, S. R. Tatavarti, D. Botez, L. J. Mawst, “8.1 μm-emitting InP-based quantum cascade laser grown on Si by metalorganic chemical vapor deposition.” Appl. Phys. Lett. 17 July 2023; 123 (3): 031110. DOI: https://doi.rog/10.1063/5.0155202
3. A. R. Boyd, S. Degroote, M. Leys, F. Schulte, O. Rockenfeller, M. Luenenbuerger, and M. Heuken” Growth of GaN/AlGaN on 200 mm diameter silicon (111) wafers by MOCVD,” Physica Status Solidi (c), 6(S2), S1045–S1048. June 2009. DOI: https://doi.org/10.1002/pssc.200880925
4. B. McEwen, M. A. Reshchikov, E. Rocco, V. Meyers, K. Hogan, O. Andrieiev, M. Vorobiov, Denis O. Demchenko, and F. Shahedipour-Sandvik, “MOCVD Growth and Characterization of Be-Doped GaN”, ACS Applied Electronic Materials, 2022 4 (8), 3780-3785 DOI: https://doi.rog/10.1021/acsaelm.1c01276
5. A. O. Voronko and D. O. Novikov, “Dependence of temperature determination accuracy on the bandwidth of the interference filter in optical pyrometry systems”, Bull. Kyiv Polytech. Inst. Ser. Instrum. Mak., no. 65(1), pp. 52–57, Jun. 2023, DOI: https;//doi.org/10.20535/1970.65(1).2023.283332
6. V. G. Verbitskiy, V. S. Antonyuk, A. O. Voronko, L. M. Korolevych, D. V. Verbitskiy and D. O. Novikov, “Matrix of Photo-sensitive Elements for Determining the Coordinates of the Source of Optical Radiation,” Journal of Nano- and Electronic Phys-ics, vol. 13, no. 4, article 04029, Aug 2021, DOI: https://doi.org/10.21272/jnep.13(4).04029
7. T. Igo, and K. Sato, “Noise Characteristics in Silicon Photodiodes,” Japanese Journal of Applied Physics, 8(12), 1481–1491. 1969. DOI: https://doi.org/10.1143/jjap.8.1481
8. L.-F. Mao, ”Physical Model of the Effects of Drift Velocity on Current Transport in PN Junctions under the Forward Electric Field,”. Silicon. 2019. DOI: https;//doi.org/10.1007/s12633-019-00249-8
9. N. Margalit, C. Xiang, S. M. Bowers, A. Bjorlin, R. Blum & J. E. Bowers, "Perspective on the future of silicon photonics and electronics", Applied Physics Letters, 118(22), 220501. DOI: https://doi.org/10.1063/5.0050117
10. Z. Djuríc, and B. Radjenović, “Rise time of silicon p-n-p photodiodes,” Solid-State Electronics, 26(12), 1143–1149. 1983. DOI: https;//doi.org/10.1016/0038-1101(83)90141-7
11. Park Myunghwan, Choi Kwangsik, S. Singh, S. Aslam, and M. Peckerar “Low leakage current technology in P+N silicon photodiode detector,” 2009 International Semiconductor Device Research Symposium.2009. DOI: https;//doi.org/10.1109/isdrs.2009.5378119
12. J. Geist, A. J. D. Farmer, P. J. Martin, F. J. Wilkinson and S. J. Collocott, “Elimination of interface recombination in oxide passivated silicon p^+n photodiodes by storage of negative charge on the oxide surface,” Applied Optics, 21(6), 1130.1982. DOI: https;//doi.org/10.1364/ao.21.001130
13. E. F. Zalewski and J. Geist, “Silicon photodiode absolute spectral response self-calibration,” Applied Optics, 19(8), 1214. 1989. DOI: https://doi.org/10.1364/ao.19.001214
14. R. Korde, R. And J. Geist, “Quantum efficiency stability of silicon photodiodes,” Applied Optics, 26(24), 5284. 1987. DOI: https://doi.org/10.1364/ao.26.005284
15. P. Dalapati, N. B. Manik, and A. N. Basu, “Effect of Temperature on Electro-Optical Characteristics of Silicon Based p-n Photodiode (VTB8440BH)”. Silicon. 2018. DOI: https://doi.org/10.1007/s12633-018-9789-0
16. H. Ouchi, T. Mukai, T. Kamei, and M. Okamura, “Silicon p-n junction photodiodes sensitive to ultraviolet radiation,” IEEE Transactions on Electron Devices, 26(12), 1965–1969. DOI: https://doi.org/10.1109/t-ed.1979.19803