Безiндуктивний широкополосний енергоефективний активний балун для частот до 60 ГГц

Tetiana Oleksiivna Baluta; Alexander Meyer; Vadim Issakov; Yurii Volodymyrovych Vuntesmeri

doi:10.20535/2523-4455.mea.291603

Vol. 29 · Issue 1 · 2024 Apr 16, 2024 Microsystems and Physical Electronics

Inductor-Less Broadband Energy-Efficient Active Balun up to 60GHz

Tetiana Oleksiivna Baluta Corresponding Національний технічний університет України "Київський політехнічний інститут імені Ігоря Сікорського" Ukraine

Alexander Meyer Технічний університет Брауншвейга Germany

Vadim Issakov Технічний університет Брауншвейга Germany

Yurii Volodymyrovych Vuntesmeri Національний технічний університет України "Київський політехнічний інститут імені Ігоря Сікорського" Ukraine

Pages291603.1-291603.8 PublishedApr 16, 2024

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VOL 29 · ISS 1 · 2024 View issue

Abstract

The paper presents a non-inductive broadband energy-efficient active balun based on a differential pair, intended for use in the input block of a frequency divider for 22nm technology. The developed device can operate in the frequency range from 2 GHz to 60 GHz with a supply voltage of 0.8 V and consume less than 3 mA. The special feature of the developed active balun is that it does not have inductive components, which reduces its size and signal loss. Amplitude of the output signal in working frequency range is from 450 mV to 200 mV. Signal gain in the range from 1-60 GHz varies from -10 dB up to 4 dB. The size of the circuit on the chip is 48x34 um. The device allows you to receive a stable signal at high data transfer rates and provides energy savings due to low current consumption.

Keywords

#analog integrated circuit #frequency divider #active balun #differential transformation #energy efficiency

References

N. Marchand, "Transmission-Line Conversion Transformers," Electronics, vol. 17, pp. 142-145, 1944.
H.-K. Chiou та J.-Y. Lin, «Symmetric offset stack balun in standard 0.13-µm CMOS technology for three broadband and low-loss balanced passive mixer designs.,» IEEE Trans. Microw. Theory Techn. , vol. 59, pp. 1529–1538, 2011. DOI: https://doi.org/10.1109/TMTT.2011.2140123
G. Yang, K. Tang та Z. Wang, «3.6–8.1 GHz CMOS balun with 1.8◦ in-band phase difference by using capacitive balance compensation technique.,» Microw. Opt. Technol. Lett. , vol. 62, pp. 1548–1551, 2020. DOI: https://doi.org/10.3390/electronics12020468
H.-K. Chiou, H.-H. Lin та C.-Y. Chang, «Lumped-element compensated high/low-pass balun design for MMIC double-balanced mixer.,» IEEE Microw. Wirel. Compon. Lett. , vol. 7, pp. 248–250, 1997. DOI: https://doi.org/10.1109/75.605493
A. Kumar, F.-Y. Meng, C. Wang, K. Adhikari, T. Qiang, Q. Wu та Y. Wu, «Design analysis of integrated passive device-based balun devices with high selectivity for mobile application.,» IEEE Access, vol. 7, pp. 23169–23176, 2019. DOI: https://doi.org/10.1109/ACCESS.2019.2898513
J. Cao, Z. Li, Q. Li та Z. Wang, «A wideband transformer balun with center open stub in CMOS process.,» IEEE Microw. Wirel. Compon. Lett. , vol. 24, pp. 614–616, 2014. DOI: https://doi.org/10.1109/LMWC.2014.2328897
U. Park, «A Wilkinson-type balun using a composite right/left-handed transmission line.,» J.Inf. Commun. Converg. Eng. , vol. 11, pp. 147–152, 2013. DOI: https://doi.org/10.6109/jicce.2013.11.3.147
V. Issakov, S. Trotta and H. Knapp, «Low-voltage flip-flop based frequency divider up to 92-GHz in 130-nm SiGe BiCMOS technology,» 2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC), pp. 1-3, 2017. DOI: https://doi.org/10.1109/INMMIC.2017.7927321
P. Starke, V. Rieß, C. Carta, and F. Ellinger, «Active Single-Ended to Differential Converter (Balun) for DC up to 70 GHz in 130 nm SiGe,» IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), pp. 1-4, 2019. DOI: https://doi.org/10.1109/BCICTS45179.2019.8972713
Huang, Bo-Jiun Huang, Bo-Jr Lin, Kun-You Wang, Huei, «A 240 GHz active balun using 0.13 m CMOS process,» Microwave and Wireless Components Letters, no. 19, pp. 164-166, 2009. DOI: https://doi.org/10.1109/LMWC.2009.2013740
B. Razavi, Design of analog CMOS integrated circuit, McGraw Hill, 2001. ISBN: 0-07-238032-2
B. Razavi, RF Microelectronics (2nd Edition), Prentice Hall Press, 2011. ISBN: 0-13-887571-5
W. M. C. Sansen, Analog Design Essentials (The International Series in Engineering and Computer Science), Berlin: Springer-Verlag, 2006. DOI: https://doi.org/10.1007/b135984
K. Wu, K. Lai, R. Hu, and C. Chang, «DC-50GHz wideband phase- compensated 90nm-CMOS active balun design,» Asia-Pacific Microwave Conference (APMC), vol. 3, pp. 1-3, 2015. DOI: https://doi.org/10.1109/APMC.2015.7413445
A. Jahanian and P. Heydari, «A CMOS Distributed Amplifier With Distributed Active Input Balun Using GBW and Linearity Enhancing Techniques,» IEEE Transactions on Microwave Theory and Techniques, vol. 60, no. 5, p. 1331–1341, 2015. DOI: https://doi.org/10.1109/RFIC.2011.5940664
C. Huynh and C. Nguyen, «Ultra-Wideband Active Balun Topology and Its Implementation on SiGe BiCMOS Across DC 50 GHz,» IEEE Microwave and Wireless Components Letters, vol. 26, no. 9, p. 720–722, 2016. DOI: https://doi.org/10.1109/LMWC.2016.2597365
J.-Y. Li, W.-J. Lin, M.-P. Houng, and L.-S. Chen, “A Low Power Consumption and Wide-Band Input Matching CMOS Active Balun for UWB System Applications”, Journal of Electromagnetic Waves and Applications, vol. 24, no. 11-12, pp. 1449–1457, Jan. 2010. DOI: https://doi.org/10.1163/156939310792149641
A. Niknejad, Electromagnetics for High-Speed Analog and Digital Communication Circuits, Cambridge University Press, 2007. DOI: https://doi.org/10.1017/CBO9780511805738.008

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1-10 of 62 Next

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[1] N. Marchand, "Transmission-Line Conversion Transformers," Electronics, vol. 17, pp. 142-145, 1944.

[2] H.-K. Chiou та J.-Y. Lin, «Symmetric offset stack balun in standard 0.13-µm CMOS technology for three broadband and low-loss balanced passive mixer designs.,» IEEE Trans. Microw. Theory Techn. , vol. 59, pp. 1529–1538, 2011. DOI: https://doi.org/10.1109/TMTT.2011.2140123

[3] G. Yang, K. Tang та Z. Wang, «3.6–8.1 GHz CMOS balun with 1.8◦ in-band phase difference by using capacitive balance compensation technique.,» Microw. Opt. Technol. Lett. , vol. 62, pp. 1548–1551, 2020. DOI: https://doi.org/10.3390/electronics12020468

[4] H.-K. Chiou, H.-H. Lin та C.-Y. Chang, «Lumped-element compensated high/low-pass balun design for MMIC double-balanced mixer.,» IEEE Microw. Wirel. Compon. Lett. , vol. 7, pp. 248–250, 1997. DOI: https://doi.org/10.1109/75.605493

[5] A. Kumar, F.-Y. Meng, C. Wang, K. Adhikari, T. Qiang, Q. Wu та Y. Wu, «Design analysis of integrated passive device-based balun devices with high selectivity for mobile application.,» IEEE Access, vol. 7, pp. 23169–23176, 2019. DOI: https://doi.org/10.1109/ACCESS.2019.2898513

[6] J. Cao, Z. Li, Q. Li та Z. Wang, «A wideband transformer balun with center open stub in CMOS process.,» IEEE Microw. Wirel. Compon. Lett. , vol. 24, pp. 614–616, 2014. DOI: https://doi.org/10.1109/LMWC.2014.2328897

[7] U. Park, «A Wilkinson-type balun using a composite right/left-handed transmission line.,» J.Inf. Commun. Converg. Eng. , vol. 11, pp. 147–152, 2013. DOI: https://doi.org/10.6109/jicce.2013.11.3.147

[8] V. Issakov, S. Trotta and H. Knapp, «Low-voltage flip-flop based frequency divider up to 92-GHz in 130-nm SiGe BiCMOS technology,» 2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC), pp. 1-3, 2017. DOI: https://doi.org/10.1109/INMMIC.2017.7927321

[9] P. Starke, V. Rieß, C. Carta, and F. Ellinger, «Active Single-Ended to Differential Converter (Balun) for DC up to 70 GHz in 130 nm SiGe,» IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), pp. 1-4, 2019. DOI: https://doi.org/10.1109/BCICTS45179.2019.8972713

[10] Huang, Bo-Jiun Huang, Bo-Jr Lin, Kun-You Wang, Huei, «A 240 GHz active balun using 0.13 m CMOS process,» Microwave and Wireless Components Letters, no. 19, pp. 164-166, 2009. DOI: https://doi.org/10.1109/LMWC.2009.2013740

[11] B. Razavi, Design of analog CMOS integrated circuit, McGraw Hill, 2001. ISBN: 0-07-238032-2

[12] B. Razavi, RF Microelectronics (2nd Edition), Prentice Hall Press, 2011. ISBN: 0-13-887571-5

[13] W. M. C. Sansen, Analog Design Essentials (The International Series in Engineering and Computer Science), Berlin: Springer-Verlag, 2006. DOI: https://doi.org/10.1007/b135984

[14] K. Wu, K. Lai, R. Hu, and C. Chang, «DC-50GHz wideband phase- compensated 90nm-CMOS active balun design,» Asia-Pacific Microwave Conference (APMC), vol. 3, pp. 1-3, 2015. DOI: https://doi.org/10.1109/APMC.2015.7413445

[15] A. Jahanian and P. Heydari, «A CMOS Distributed Amplifier With Distributed Active Input Balun Using GBW and Linearity Enhancing Techniques,» IEEE Transactions on Microwave Theory and Techniques, vol. 60, no. 5, p. 1331–1341, 2015. DOI: https://doi.org/10.1109/RFIC.2011.5940664

[16] C. Huynh and C. Nguyen, «Ultra-Wideband Active Balun Topology and Its Implementation on SiGe BiCMOS Across DC 50 GHz,» IEEE Microwave and Wireless Components Letters, vol. 26, no. 9, p. 720–722, 2016. DOI: https://doi.org/10.1109/LMWC.2016.2597365

[17] J.-Y. Li, W.-J. Lin, M.-P. Houng, and L.-S. Chen, “A Low Power Consumption and Wide-Band Input Matching CMOS Active Balun for UWB System Applications”, Journal of Electromagnetic Waves and Applications, vol. 24, no. 11-12, pp. 1449–1457, Jan. 2010. DOI: https://doi.org/10.1163/156939310792149641

[18] A. Niknejad, Electromagnetics for High-Speed Analog and Digital Communication Circuits, Cambridge University Press, 2007. DOI: https://doi.org/10.1017/CBO9780511805738.008

Inductor-Less Broadband Energy-Efficient Active Balun up to 60GHz

Abstract

Keywords

References

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