Оcобливості впливу напруженого стану на термічну стабільність фази NiSi в плівках Ni(Pt)/Si

Tetiana Verbytska; Leonid Levchuk; Ruslan Shkarban; Iurii Makogon

doi:10.20535/kpisn.2025.1.322112

Vol. 138 · Issue 1 · 2025 Apr 24, 2025 article

FEATURES OF THE INFLUENCE OF THE STRESS STATE ON THE THERMAL STABILITY OF THE NiSi PHASE IN Ni(Pt)/Si FILMS

Tetiana Verbytska Corresponding National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute, Ukraine Ukraine

Leonid Levchuk National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”, , Ukraine Ukraine

Ruslan Shkarban National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”, , Ukraine Ukraine

Iurii Makogon National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”, , Ukraine Ukraine

PublishedApr 24, 2025

PDF (Ukrainian)

KPISN 1 VOL 138 · 1

VOL 138 · ISS 1 · 2025 View issue

Abstract

Background. It is possible to increase the speed, the degree of integration of microcircuits and their reliable operation due to the use of thermostable nanoscale films of transition metal silicides as functional elements. Stress in nanostructures is a general problem of microelectronics, which must be taken into account at all stages of production, storage and operation of both discrete devices and integrated circuits Objective. Study of the effect of stress state and Pt alloying element on the phase composition and thermal stability of NiSi nickel monosilicide in nanoscale [(Ni+1 at.% Pt)30 nm] and [(Ni+8 at.% Pt)30 nm] films on single crystalline Si(001) substrates during vacuum annealing in the temperature range of 400-1000 °С. Methods. Nanoscale films were deposited by magnetron sputtering on Si(001) substrates at room temperature. The samples were annealed in a vacuum of ~1.3∙10 -3 Pa in the temperature range of 400-1000 °C. The influence of Pt on the change in stress state and the thermal stability of the NiSi phase in Ni(Pt) films on a single crystalline Si(001) substrate was investigated using the methods of X-ray structural phase analysis, mass spectrometry of secondary neutrals, and resistometry (four-probe method). Results. The influence of internal mechanical stresses and the content of the Pt alloying element in the film on the sequence, temperature of silicide phases formation, and thermal stability of NiSi nickel monosilicide during vacuum annealing was determined. Conclusions. It was established that the addition of Pt to the Ni film leads to an increase in the nickel monosilicide formation temperature compared to the Ni(30 nm) film. Nickel monosilicide NiSi begins to form in films with 1 at.% Pt and 8 at.% Pt during annealing at temperatures of 500 °C and 450 °C, respectively. An increase in the thermal stability of NiSi is associated with a significant decrease in the driving force of the NiSi into NiSi 2 phase transition due to the formation of a Ni x Pt 1-x Si solid solution, which has a lower free energy, due to the positive contribution of the .

Keywords

#stressed state #NiSi #phase composition #nanoscale films #annealing #vacuum

References

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Artal R, Serrà A, Michler J, Philippe L, Gómez E. Electrodeposition of mesoporous NI-RICH NI-Pt films for highly efficient methanol oxidation // Nanomaterials. - 2020. 10(8). -P. 1435, http://dx.doi.org/10.3390/nano10081435
Sudiyarmanto, Eiichi Kondoh. Synthesis and Characterization of Ni-Pt Alloy Thin Films Prepared by Supercritical Fluid Chemical Deposition Technique // Nanomaterials (Basel). -2021.-11(1). - P.151, http://dx.doi.org/10.3390/nano11010151
Kumar R., Bahri M. and Song Yang, Gonell F., Thomas Cyril, Ersen O., Sanchez C., Laberty C., Portehault D. Phase selective synthesis of nickel silicide nanocrystals in molten salts for electrocatalysis of the oxygen evolution reaction // Nanoscale. - 2020. -12(28). -P. 15209-15213. https://hal.sorbonne-universite.fr/hal-02923099v1
Wu Chi-Ting, Lee Wen-His, Wang Ying-Lang, Chang Shih-Chieh. In-situ Rs and improvement in thermal stability of nickel silicides using different interlayer films // Journal of Materials Science and Engineering A. - 2015. -5(3-4). -P. 159-165. http://dx.doi.org/10.17265/2161-6213/2015.3-4.008
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. Jianbao Gao, Annie Malchère, Shenglan Yang, Andrea Campos, Ting Luo, Khalid Quertite, Philippe Steyer, Christophe Girardeaux, Lijun Zhang, Dominique Mangelinck, Dewetting of Ni silicide thin film on Si substrate: In-situ experimental study and phase-field modeling // Acta Materialia, Volume 223, 2022, 117491, ISSN 1359-6454, https://doi.org/10.1016/j.actamat.2021.117491
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. W. Huang, L.-C. Zhang, Y.-Z. Gao, H.-Y. Jin. The improvements of thermal stability of nickel silicide by adding the Zr interlayer // Microelectronic Engineering. – 2006. – Vol. 83. – P. 345 – 350.
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. M. Lemang, Ph. Rodriguez, M. Grégoire, M. Juhel, B. Saidi, P. Gergaud, F. Nemouchi, D. Mangelinck, Redistribution of phosphorus during NiPtSi formation on in-situ doped Si // Microelectronic Engineering, Volume 202, 2018, Pages 25-30, ISSN 0167-9317, https://doi.org/10.1016/j.mee.2018.10.005
. K. Hoummada, C. Perrin-Pellegrino, D. Mangelinck; Effect of Pt addition on Ni silicide formation at low temperature: Growth, redistribution, and solubility // Journal of Applied Physics 15 September 2009; 106 (6): 063511. https://doi.org/10.1063/1.3204948
. R. Mezouar, A. Merabet, A. Bahloul, Effect of Vacuum Annealing Temperature on the Binary System Ni/Si(100) Journal of nano- and electronic vol. 12 no 6, 06005(5pp) (2020) https://doi.org/10.1016/j.mee.2005.10.001
. O. Cojocaru-Mirédin, D. Mangelinck, K. Hoummada, E. Cadel, D. Blavette, B. Deconihout, C. Perrin-Pellegrino, Snowplow effect and reactive diffusion in the Pt doped Ni–Si system // Scripta Materialia, Volume 57, Issue 5, 2007, Pages 373-376, ISSN 1359-6462, https://doi.org/10.1016/j.scriptamat.2007.05.007

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§ 06 — Related

[1] Min J-G, Lee D-H, Kim Y-U, Cho W-J. Implementation of ambipolar polysilicon thin-film transistors with nickel silicide Schottky junctions by low-thermal-budget microwave annealing // Nanomaterials. -2022. - 12(4). - P. 628, https://doi.org/10.3390/nano12040628

[2] Yeh PC, Duan H, Chung TK. A Novel three-axial magnetic-piezoelectric mems ac magnetic field sensor // Micromachines (Basel). – 2019. - 10(10). -Р. 710, https://doi.org/10.3390/mi10100710

[3] Artal R, Serrà A, Michler J, Philippe L, Gómez E. Electrodeposition of mesoporous NI-RICH NI-Pt films for highly efficient methanol oxidation // Nanomaterials. - 2020. 10(8). -P. 1435, http://dx.doi.org/10.3390/nano10081435

[4] Sudiyarmanto, Eiichi Kondoh. Synthesis and Characterization of Ni-Pt Alloy Thin Films Prepared by Supercritical Fluid Chemical Deposition Technique // Nanomaterials (Basel). -2021.-11(1). - P.151, http://dx.doi.org/10.3390/nano11010151

[5] Kumar R., Bahri M. and Song Yang, Gonell F., Thomas Cyril, Ersen O., Sanchez C., Laberty C., Portehault D. Phase selective synthesis of nickel silicide nanocrystals in molten salts for electrocatalysis of the oxygen evolution reaction // Nanoscale. - 2020. -12(28). -P. 15209-15213. https://hal.sorbonne-universite.fr/hal-02923099v1

[6] Wu Chi-Ting, Lee Wen-His, Wang Ying-Lang, Chang Shih-Chieh. In-situ Rs and improvement in thermal stability of nickel silicides using different interlayer films // Journal of Materials Science and Engineering A. - 2015. -5(3-4). -P. 159-165. http://dx.doi.org/10.17265/2161-6213/2015.3-4.008

[7] Zhang, S.-L. Self-aligned silicides for ohmic contacts in complementary metal-oxide semiconductor technology : TiSi2, CoSi2, and NiSi / S.-L. Zhang, U. Smith // J. Vac. Sci. Technol. A. – 2004. – Vol. 22, №4. – P. 1361 – 1370. http://dx.doi.org/10.1116/1.1688364

[8] Ramamurthy, S. Low temperature spike anneal for NiSi / S. Ramamurthy, B. Ramachandran, A. Hunter // Solid State Technology. – 2004. – Vol. 10. – P.37 – 39. https://doi.org/10.1016/j.mee.2004.07.048

[9] . Zhihui Liu, Qizhen Wang, Shuning Guo, Hualin Wang, Weiwei Jiang, Shimin Liu, Chaoqian Liu, Nan Wang, Yunxian Cui, Wanyu Ding, The preliminary exploration on change mechanism of Seebeck coefficient for NiCr/NiSi thin film thermocouple with different thickness // Journal of Alloys and Compounds, Volume 931, 2023, 167573,

[10] ISSN 0925-8388, https://doi.org/10.1016/j.jallcom.2022.167573 .

[11] . Sunil Babu Eadi, Ki-Woo Song, Hyeong-Sub Song, Sang Hyeon Kim, Hyun-Woong Choi, Hi-Deok Lee, NiSiTb alloy interlayer properties at NiSi/Si junctions for improving thermal stability and contact resistance // Microelectronic Engineering, Volume 236, 2021, 111482, ISSN 0167-9317, https://doi.org/10.1016/j.mee.2020.111482

[12] . Munir H. Nayfeh, Ammar Nayfeh, Chapter 6 - Nanoparticle-assisted growth of nanowires, Editor(s): Munir H. Nayfeh, Ammar Nayfeh, In Micro and Nano Technologies, Integrated Silicon-Metal Systems At the Nanoscale // Elsevier, 2023, Pages 129-151, ISBN 9780443186738, https://doi.org/10.1016/B978-0-443-18673-8.00007-7

[13] . Ratnesh K. Pandey, Gurupada Maity, Sachin Pathak, Parswajit Kalita, Santosh Dubey, New insights on Ni-Si system for microelectronics applications // Microelectronic Engineering, Volume 264, 2022, 111871, ISSN 0167-9317, https://doi.org/10.1016/j.mee.2022.111871

[14] . Mike El Kousseifi, Khalid Hoummada, Federico Panciera, Christian Lavoie, Dominique Mangelinck, Nucleation and lateral growth kinetics of the NiSi phase at the epitaxial θ-Ni2Si/Si interface // Acta Materialia, Volume 198, 2020, Pages 100-110, ISSN 1359-6454, https://doi.org/10.1016/j.actamat.2020.07.062 .

[15] . Luo, Jun & Qiu, Zhi-Jun & Zhang, Zhen & Östling, Mikael & Zhang, Shi-Li. (2010). Interaction of NiSi with dopants for metallic source/drain applications. // Journal of vacuum science & technology b. 28. C1i1-c1i11. https://doi.org/10.1116/1.3248267

[16] . Jianbao Gao, Annie Malchère, Shenglan Yang, Andrea Campos, Ting Luo, Khalid Quertite, Philippe Steyer, Christophe Girardeaux, Lijun Zhang, Dominique Mangelinck, Dewetting of Ni silicide thin film on Si substrate: In-situ experimental study and phase-field modeling // Acta Materialia, Volume 223, 2022, 117491, ISSN 1359-6454, https://doi.org/10.1016/j.actamat.2021.117491

[17] . W. Huang, L. Zhang, Y. Gao, H. Jin. Effect of a thin W, Pt, Mo and Zr interlayer on the thermal stability and electrical characteristics of NiSi // Microelectronic Engineering. – 2007. – Vol. 84. – P. 678 – 683. https://doi.org/10.1016/j.mee.2006.11.006

[18] . W. Huang, L.-C. Zhang, Y.-Z. Gao, H.-Y. Jin. The improvements of thermal stability of nickel silicide by adding the Zr interlayer // Microelectronic Engineering. – 2006. – Vol. 83. – P. 345 – 350.

[19] . J. F. Liu, H. B. Chen, J. Y. Feng, J. Zhu; Improvement of the thermal stability of NiSi films by using a thin Pt interlayer // Appl. Phys. Lett. 2 October 2000; 77 (14): 2177–2179. https://doi.org/10.1063/1.1313815

[20] . M. Lemang, Ph. Rodriguez, M. Grégoire, M. Juhel, B. Saidi, P. Gergaud, F. Nemouchi, D. Mangelinck, Redistribution of phosphorus during NiPtSi formation on in-situ doped Si // Microelectronic Engineering, Volume 202, 2018, Pages 25-30, ISSN 0167-9317, https://doi.org/10.1016/j.mee.2018.10.005

[21] . K. Hoummada, C. Perrin-Pellegrino, D. Mangelinck; Effect of Pt addition on Ni silicide formation at low temperature: Growth, redistribution, and solubility // Journal of Applied Physics 15 September 2009; 106 (6): 063511. https://doi.org/10.1063/1.3204948

[22] . R. Mezouar, A. Merabet, A. Bahloul, Effect of Vacuum Annealing Temperature on the Binary System Ni/Si(100) Journal of nano- and electronic vol. 12 no 6, 06005(5pp) (2020) https://doi.org/10.1016/j.mee.2005.10.001

[23] . O. Cojocaru-Mirédin, D. Mangelinck, K. Hoummada, E. Cadel, D. Blavette, B. Deconihout, C. Perrin-Pellegrino, Snowplow effect and reactive diffusion in the Pt doped Ni–Si system // Scripta Materialia, Volume 57, Issue 5, 2007, Pages 373-376, ISSN 1359-6462, https://doi.org/10.1016/j.scriptamat.2007.05.007

FEATURES OF THE INFLUENCE OF THE STRESS STATE ON THE THERMAL STABILITY OF THE NiSi PHASE IN Ni(Pt)/Si FILMS

Abstract

Keywords

References

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