Measuring stand for investigation of  the influence of inhomogeneous deformation on the bipolar mass components

Abstract

 In this work, a bench was designed to study the effect of heterogeneous deformation on components of bipolar ICs. This stand is designed to measure the resistance of silicon resistors, voltage-current characteristics of diodes and tran sistors under the action of a known inhomogeneous deformation, with the display of received information on the screen of a personal computer for further processing. One of the important components of the reliability of the chips is the integrity and absence of external influences on the crystal in the case. The consequence of external influences is the deposition of the substrate of the crystal in the casing chip. This process causes inhomogeneous pressure on the crystal in the chip. This results in changes in the parameters and characteristics of the IC, which, in turn, causes the malfunction of the device or system as a whole. The purpose of this work is to design a bench for studying the effect of heterogeneous deformation on components of bipolar ICs. The stand should be characterized by precision and versatility of measurement, as well as the ability to regulate pressure acting on a similar basis. The stand is planned to be used for experimental study of the influence of delimitation on components of bipolar ICs, the construction of models of such influence, and justification for choosing methods for its compensation. Delamination is a process of bundle of composite material. In the case of a chip, this phenomenon occurs with the lining located between the crystal and the bottom of the case. The reasons for this process are the temperature and humidity variations in the environment, the uneven grip of the layers and the presence of cavities between them, as well as the defects in the materials and the housing. Over time, these factors lead to delamination, and in the process of bundle inside the case, the internal stress of the materials increases, which gradually increases up to the moment of a crack in the case, which will remove all internal stresses. The phenomenon described above causes hetero geneous deformation of the chip of the chip. Under heterogeneous deformation it is understood that the occurrence of local pressure acting on the surface of the crystal. Such pressure is sufficient to change the electrical characteristics of the components of the IC. Moreover, the greater the pressure, the greater the change in the parameters of the elements. The stand allows you to control the pressure in a wide range and is versatile to measure the electrical characteristics of different components of the chip. study of the influence of heterogeneous deformation on components of bipolar ICs. The stand includes a power source, a power sensor and a PC. For precision measurements, the Keithley 2100 multimeter was used. The Hameg HM7042-5 laboratory power supply was used to increase the accuracy of the measurement. The applied pressure is fixed using an analog sensor Tecsis F2210, whose signal is digitized by the chip HX711. Pressure control is due to the mechanical press. The booth's specialty is the low cost of implementation and the ease of its production. the possibility of configuring the components of the stand depending on the task of the study. 

Keywords

References

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Copyright (c) 2019 Максим Олегович Зилевич (Автор)