Вимірювач потужності ультрафіолетового випромінювання

Ievhenii Vitaliiovych Arshan; Roman Ivanovych Bondarenko; Oleksandr Oleksandrovych Kalachnyk; O. B. Sidniev; Tetiana V. Semikina

doi:10.20535/2523-4455.mea.199843

Vol. 25 · Issue 2 · 2020 Aug 31, 2020 Electronic Systems and Signals

Device for Measurements of Ultraviolet’s Power Radiation

Ievhenii Vitaliiovych Arshan Corresponding Національний технічний університет України "Київський політехнічний інститут імені Ігоря Сікорського" Ukraine

Roman Ivanovych Bondarenko Національний технічний університет України "Київський політехнічний інститут імені Ігоря Сікорського" Ukraine

Oleksandr Oleksandrovych Kalachnyk Національний технічний університет України "Київський політехнічний інститут імені Ігоря Сікорського" Ukraine

O. B. Sidniev Інститут фізики напівпровідників ім. В. Лашкарьова НАНУ Ukraine

Tetiana V. Semikina Національний технічний університет України "Київський політехнічний інститут імені Ігоря Сікорського" Ukraine

Pages44-49 PublishedAug 31, 2020

PDF (Ukrainian)

VOL 25 · ISS 2 · 2020 View issue

Abstract

The paper presents a technique for developing a device for measurements of power of ultraviolet (UV) radiation. The paper provides a brief analysis of existing approaches in the design of UV dosimeters. The rationale for the design of the dosimeter using an UV photodiode is given. The choice of a photodiode based on cadmium sulfide is made on the basis of the technological equipment existing in Ukraine, the level of development of technological modes that allow, at low technology costs, to obtain photodiodes with parameters not inferior to expensive foreign analogues based on materials of the A 3 B 5 group and silicon carbide. The problems that were solved when developing a photodiode based on CdS and the original solutions found by the authors of the development are shown. The primary transducer is a photodiode based on the surface-barrier structure of p-Cu 1.8 S/n-CdS with a photosensitive component based on cadmium sulfide CdS. At a wavelength of λ ~ 250 nm, the sensitivity of p-Cu 1.8 S/n-CdS sensors is two times higher than GaP-based Schottky diodes. The value of the output current depends on the power of the UV radiation and lies within 0.0001-0.2 mA. The advantages of the developed sensor are the simplicity and low cost of the production technology, the ability to produce films of a large area, the characteristics of expensive foreign industrial UV photodiodes. The stages of development of the amplifier circuit for the selected photodiode are given. To design the amplifier circuit, the existing GUVA-S12SD UV Sensor V2 amplifier circuit was analyzed, and a custom circuit was developed with the following advantages: unipolar power; smaller potential difference between input and output compared to analog; different voltages are measured. The developed circuit uses the simplest resistive voltage divider, which is two series resistors connected to a voltage source. The scheme denominations were calculated. The sequence of printed circuit board (PCB) execution in the Sprint-Layout software environment is described. An image of the developed circuit board is shown. An analog-to-digital converter K1108PV1A is selected for signal processing from the amplifier and its technical characteristics are given. The block diagram of the dosimeter of energy illumination is offered: a photodiode, an amplifier of an input signal, an analog-to-digital converter, a microcontroller. As a microprocessor to be connected to the ADC, an electronic stand based on a microcontroller will be used to debug programs using ATmega16A. The obtained circuit solutions for the construction of a UV dosimeter based on a CdS photodiode can be used to quickly create an industrial device that will be an integral part of the complexes for disinfecting the metro and other rooms from viral infections.

Keywords

#ultraviolet radiation #amplifier #cadmium sulfide #photodiode

References

P. O. of the E. Union, Advances in solar ultraviolet spectroradiometry. Publications Office of the European Union, 1997, ISBN: 92-828-0990-0.
V. D. Ryzhikov et al., “A Portable Meter of the Ultraviolet Radiation in Biologically Active Ranges of Solar Radiation Based on the ZnSe Semiconductor,” Telecommun. Radio Eng., vol. 55, no. 5, p. 9, 2001, DOI: 10.1615/TelecomRadEng.v55.i5.130.
T. V. Blank and Y. A. Gol’dberg, “Semiconductor photoelectric converters for the ultraviolet region of the spectrum,” Semiconductors, vol. 37, no. 9, pp. 999–1030, Sep. 2003, DOI: 10.1134/1.1610111.
R. Anaeva, A. Berkeliev, and E. Al., “UF-fotopriemnik na osnove poverkhnostno-bar`ernoj struktury` Ga1-xAlxP (Xs = 0,5 + 0,1) [UV photodetector based on the Ga1-xAlxP surface-barrier structure (Xs = 0.5 + 0.1)],” FTP, vol. 15, no. 6, pp. 1122–1125, 1981.
S. Y. Pavelets, Y. N. Bobrenko, T. V. Semikina, B. S. Atdaev, G. I. Sheremetova, and M. V. Yaroshenko, “Ultraviolet Sensors Based on ZnxCd1 – xS Solid Solutions,” Ukr. J. Phys., vol. 64, no. 4, p. 308, May 2019, DOI: 10.15407/ujpe64.4.308.
S. Y. Pavelets, Y. N. Bobrenko, T. V. Semikina, G. I. Sheremetova, and M. V. Yaroshenko, “Photovoltaic converters of ultraviolet radiation with graded-gap layers based on CdxZn1-xS solid solutions,” Optoelectron. Semicond. Technol., vol. 49, pp. 69–73, 2014, URL: http://isp.kiev.ua/images/Page_Image/Jornals/opt/vol49/opt49_69.pdf .
Y. Bobrenko, “Thin-film solar converters based on the p-Cu1.8S/n-CdTe surface-barrier structure,” Semicond. physics, quantum Electron. Optoelectron., vol. 18, no. 1, pp. 101–105, Mar. 2015, DOI: 10.15407/spqeo18.01.101.
Y. N. Bobrenko, S. Y. Pavelets, A. M. Pavelets, T. V. Semikina, and N. V. Yaroshenko, “Surface-barrier photoconverters with graded-gap layers in the space-charge region,” Semiconductors, vol. 49, no. 4, pp. 519–523, Apr. 2015, DOI: 10.1134/S1063782615040089.
S. Y. Pavelets, “Effective polycrystalline sensor of ultraviolet radiation,” Semicond. Phys. Quantum Electron. Optoelectron., vol. 20, no. 3, pp. 335–339, Oct. 2017, DOI: 10.15407/spqeo20.03.335.
V. Dorogan, T. Vieru, M. Manole, R. Savastru, and T. Zisu, “Ultraviolet radiation sensors on the basis of semiconductors,” 2001, p. 858, DOI: 10.1117/12.432818.
V. D. Ryzhikov et al., “Professional and household dosimeters for UV biologically active ranges of solar radiation on the basis of ZnSe semiconductor-metal nanostructures,” 2010, p. 77151Q, DOI: 10.1117/12.853665.
V. K. Butenko, Y. G. Dobrovolsky, B. G. Shabashkevich, and V. G. Yuriev, “Dosimeters for energy illumination of ultraviolet radiation of the Tensor type,” Technol. Des. Electron. Equip., no. 5, pp. 43–45, 2006.
W. Peng, Y. He, C. Wen, and K. Ma, “Surface acoustic wave ultraviolet detector based on zinc oxide nanowire sensing layer,” Sensors Actuators A Phys., vol. 184, pp. 34–40, Sep. 2012, DOI: 10.1016/j.sna.2012.06.017.
V. Chivukula, D. Ciplys, M. Shur, and P. Dutta, “ZnO nanoparticle surface acoustic wave UV sensor,” Appl. Phys. Lett., vol. 96, no. 23, p. 233512, Jun. 2010, DOI: 10.1063/1.3447932.
W.-C. Tsai, H. Kao, K.-H. Liao, Y.-H. Liu, T.-P. Lin, and E. S. Jeng, “Room temperature fabrication of ZnO/ST-cut quartz SAW UV photodetector with small temperature coefficient,” Opt. Express, vol. 23, no. 3, p. 2187, Feb. 2015, DOI: 10.1364/OE.23.002187.
S. Kumar, G.-H. Kim, K. Sreenivas, and R. P. Tandon, “ZnO based surface acoustic wave ultraviolet photo sensor,” J. Electroceramics, vol. 22, no. 1–3, pp. 198–202, Feb. 2009, DOI: 10.1007/s10832-007-9409-7.
W. Wen-Bo et al., “Transparent ZnO/glass surface acoustic wave based high performance ultraviolet light sensors*,” Chinese Phys. B, vol. 24, no. 5, p. 057701, 2015, URL: http://cpb.iphy.ac.cn/article/2015/cpb_24_5_057701.html .
A. I. Sidorov, Sensory photonics. Textbook. St. Petersburg: University, ITMO, 2019.
V. D. Dubrovin, A. I. Ignatiev, N. V. Nikonorov, A. I. Sidorov, T. A. Shakhverdov, and D. S. Agafonova, “Luminescence of silver molecular clusters in photo-thermo-refractive glasses,” Opt. Mater. (Amst)., vol. 36, no. 4, pp. 753–759, Feb. 2014, DOI: 10.1016/j.optmat.2013.11.018.
pcs UV Photodiode 220 to 370nm Ultraviolet Metal Shell Photodiode: Amazon.com: Industrial & Scientific.” [Online]. Available: https://www.amazon.com/Photodiode-370nm-Ultraviolet-Metal-Shell/dp/B07VVHPNFX .
“SiC UV Photodiodes | sglux.” [Online]. Available: https://sglux.de/en/product-category/sic-uv-photodiodes/ .
“Genuv.” [Online]. Available: http://www.geni-uv.com/ .
“Ultraviolet/Extreme Ultraviolet (UV/EUV) Photodiodes: SXUV 100.” [Online]. Available: https://www.photonicsonline.com/doc/ultravioletextreme-ultraviolet-uveuv-0001 .
“Analog UV Sensor V2.” [Online]. Available: https://www.trossenrobotics.com/analog-uv-sensor-v2.aspx .
“Sprint-Layout.” [Online]. Available: https://cxem.net/software/sprint_layout.php .
“AD45048.” [Online]. Available: https://www.analog.com/media/en/technical-documentation/data-sheets/AD45048.pdf .
“1108pv1.” [Online]. Available: https://eandc.ru/pdf/mikroskhema/1108pv1.pdf .

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1-10 of 14 Next

You may also start an advanced similarity search for this article.

[1] P. O. of the E. Union, Advances in solar ultraviolet spectroradiometry. Publications Office of the European Union, 1997, ISBN: 92-828-0990-0.

[2] V. D. Ryzhikov et al., “A Portable Meter of the Ultraviolet Radiation in Biologically Active Ranges of Solar Radiation Based on the ZnSe Semiconductor,” Telecommun. Radio Eng., vol. 55, no. 5, p. 9, 2001, DOI: 10.1615/TelecomRadEng.v55.i5.130.

[3] T. V. Blank and Y. A. Gol’dberg, “Semiconductor photoelectric converters for the ultraviolet region of the spectrum,” Semiconductors, vol. 37, no. 9, pp. 999–1030, Sep. 2003, DOI: 10.1134/1.1610111.

[4] R. Anaeva, A. Berkeliev, and E. Al., “UF-fotopriemnik na osnove poverkhnostno-bar`ernoj struktury` Ga1-xAlxP (Xs = 0,5 + 0,1) [UV photodetector based on the Ga1-xAlxP surface-barrier structure (Xs = 0.5 + 0.1)],” FTP, vol. 15, no. 6, pp. 1122–1125, 1981.

[5] S. Y. Pavelets, Y. N. Bobrenko, T. V. Semikina, B. S. Atdaev, G. I. Sheremetova, and M. V. Yaroshenko, “Ultraviolet Sensors Based on ZnxCd1 – xS Solid Solutions,” Ukr. J. Phys., vol. 64, no. 4, p. 308, May 2019, DOI: 10.15407/ujpe64.4.308.

[6] S. Y. Pavelets, Y. N. Bobrenko, T. V. Semikina, G. I. Sheremetova, and M. V. Yaroshenko, “Photovoltaic converters of ultraviolet radiation with graded-gap layers based on CdxZn1-xS solid solutions,” Optoelectron. Semicond. Technol., vol. 49, pp. 69–73, 2014, URL: http://isp.kiev.ua/images/Page_Image/Jornals/opt/vol49/opt49_69.pdf .

[7] Y. Bobrenko, “Thin-film solar converters based on the p-Cu1.8S/n-CdTe surface-barrier structure,” Semicond. physics, quantum Electron. Optoelectron., vol. 18, no. 1, pp. 101–105, Mar. 2015, DOI: 10.15407/spqeo18.01.101.

[8] Y. N. Bobrenko, S. Y. Pavelets, A. M. Pavelets, T. V. Semikina, and N. V. Yaroshenko, “Surface-barrier photoconverters with graded-gap layers in the space-charge region,” Semiconductors, vol. 49, no. 4, pp. 519–523, Apr. 2015, DOI: 10.1134/S1063782615040089.

[9] S. Y. Pavelets, “Effective polycrystalline sensor of ultraviolet radiation,” Semicond. Phys. Quantum Electron. Optoelectron., vol. 20, no. 3, pp. 335–339, Oct. 2017, DOI: 10.15407/spqeo20.03.335.

[10] V. Dorogan, T. Vieru, M. Manole, R. Savastru, and T. Zisu, “Ultraviolet radiation sensors on the basis of semiconductors,” 2001, p. 858, DOI: 10.1117/12.432818.

[11] V. D. Ryzhikov et al., “Professional and household dosimeters for UV biologically active ranges of solar radiation on the basis of ZnSe semiconductor-metal nanostructures,” 2010, p. 77151Q, DOI: 10.1117/12.853665.

[12] V. K. Butenko, Y. G. Dobrovolsky, B. G. Shabashkevich, and V. G. Yuriev, “Dosimeters for energy illumination of ultraviolet radiation of the Tensor type,” Technol. Des. Electron. Equip., no. 5, pp. 43–45, 2006.

[13] W. Peng, Y. He, C. Wen, and K. Ma, “Surface acoustic wave ultraviolet detector based on zinc oxide nanowire sensing layer,” Sensors Actuators A Phys., vol. 184, pp. 34–40, Sep. 2012, DOI: 10.1016/j.sna.2012.06.017.

[14] V. Chivukula, D. Ciplys, M. Shur, and P. Dutta, “ZnO nanoparticle surface acoustic wave UV sensor,” Appl. Phys. Lett., vol. 96, no. 23, p. 233512, Jun. 2010, DOI: 10.1063/1.3447932.

[15] W.-C. Tsai, H. Kao, K.-H. Liao, Y.-H. Liu, T.-P. Lin, and E. S. Jeng, “Room temperature fabrication of ZnO/ST-cut quartz SAW UV photodetector with small temperature coefficient,” Opt. Express, vol. 23, no. 3, p. 2187, Feb. 2015, DOI: 10.1364/OE.23.002187.

[16] S. Kumar, G.-H. Kim, K. Sreenivas, and R. P. Tandon, “ZnO based surface acoustic wave ultraviolet photo sensor,” J. Electroceramics, vol. 22, no. 1–3, pp. 198–202, Feb. 2009, DOI: 10.1007/s10832-007-9409-7.

[17] W. Wen-Bo et al., “Transparent ZnO/glass surface acoustic wave based high performance ultraviolet light sensors*,” Chinese Phys. B, vol. 24, no. 5, p. 057701, 2015, URL: http://cpb.iphy.ac.cn/article/2015/cpb_24_5_057701.html .

[18] A. I. Sidorov, Sensory photonics. Textbook. St. Petersburg: University, ITMO, 2019.

[19] V. D. Dubrovin, A. I. Ignatiev, N. V. Nikonorov, A. I. Sidorov, T. A. Shakhverdov, and D. S. Agafonova, “Luminescence of silver molecular clusters in photo-thermo-refractive glasses,” Opt. Mater. (Amst)., vol. 36, no. 4, pp. 753–759, Feb. 2014, DOI: 10.1016/j.optmat.2013.11.018.

[20] pcs UV Photodiode 220 to 370nm Ultraviolet Metal Shell Photodiode: Amazon.com: Industrial & Scientific.” [Online]. Available: https://www.amazon.com/Photodiode-370nm-Ultraviolet-Metal-Shell/dp/B07VVHPNFX .

[21] “SiC UV Photodiodes | sglux.” [Online]. Available: https://sglux.de/en/product-category/sic-uv-photodiodes/ .

[22] “Genuv.” [Online]. Available: http://www.geni-uv.com/ .

[23] “Ultraviolet/Extreme Ultraviolet (UV/EUV) Photodiodes: SXUV 100.” [Online]. Available: https://www.photonicsonline.com/doc/ultravioletextreme-ultraviolet-uveuv-0001 .

[24] “Analog UV Sensor V2.” [Online]. Available: https://www.trossenrobotics.com/analog-uv-sensor-v2.aspx .

[25] “Sprint-Layout.” [Online]. Available: https://cxem.net/software/sprint_layout.php .

[26] “AD45048.” [Online]. Available: https://www.analog.com/media/en/technical-documentation/data-sheets/AD45048.pdf .

[27] “1108pv1.” [Online]. Available: https://eandc.ru/pdf/mikroskhema/1108pv1.pdf .

Device for Measurements of Ultraviolet’s Power Radiation

Abstract

Keywords

References

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